Image sensor package and manufacturing method thereof

ABSTRACT

An image sensor package and a manufacturing method thereof are provided. The image sensor package includes a redistribution circuit structure; an image sensing chip disposed on the redistribution circuit structure and having a sensing surface, on which a sensing area and a first conductive pillar arranged in the periphery of the sensing area are disposed; a lid covering the sensing area; an encapsulant disposed on the redistribution circuit structure and encapsulating at least part of the image sensing chip and the cover; and a top tier semiconductor chip disposed above the image sensing chip and having an active surface on which a first conductor is disposed. The first conductor overlaps the image sensing chip in a direction perpendicular to the sensing surface. The first conductive pillar and the first conductor are aligned and bonded to each other to electrically connect the image sensing chip and the top tier semiconductor chip.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a divisional application of and claims the prioritybenefit of U.S. application Ser. No. 16/884,051, filed on May 27, 2020,now allowed. The prior U.S. application Ser. No. 16/884,051 claims thepriority benefits of U.S. provisional application Ser. No. 62/924,187,filed on Oct. 22, 2019, and Taiwan application serial no. 108148199,filed on Dec. 27, 2019. The entirety of each of the above-mentionedpatent applications is hereby incorporated by reference herein and madea part of this specification.

TECHNICAL FIELD

The disclosure relates to a semiconductor chip package and amanufacturing method thereof, and particularly relates to an imagesensor package and a manufacturing method thereof.

BACKGROUND

With the advent of the digital era, image sensors become more and morecommon in our daily life in forms such as smart phones, digital cameras,and monitors. In order for image sensors to be thinner and lighter andachieve better performance, the current packaging technology has made anattempt to integrate the semiconductor chip into the image sensorpackage. However, when trying to integrate the semiconductor chip intothe image sensor package, the R&D personnel often encounter the problemthat the speed of signal communication between the semiconductor chipand the image sensing chip is limited, which impairs the overallperformance of the image sensor.

SUMMARY

The disclosure provides an image sensor package having favorableperformance.

The disclosure provides an image sensor package, including: aredistribution circuit structure; an image sensing chip disposed on theredistribution circuit structure and having a sensing surface, wherein asensing area and a first conductive pillar are disposed on the sensingsurface, and the first conductive pillar is arranged in a periphery ofthe sensing area; a lid covering the sensing area; an encapsulantdisposed on the redistribution circuit structure and encapsulating atleast part of the image sensing chip and the lid; and a top tiersemiconductor chip disposed above the image sensing chip and having anactive surface, wherein a first conductor is disposed on the activesurface of the top tier semiconductor chip. The first conductor overlapsthe image sensing chip in a direction perpendicular to the sensingsurface, and the first conductive pillar and the first conductor arealigned with and bonded to each other to electrically connect the imagesensing chip and the top tier semiconductor chip.

The disclosure provides an image sensor package, including: aredistribution circuit structure; a semiconductor element disposed onthe redistribution circuit structure and including an image sensing chiphaving a sensing surface, wherein a sensing area and a first conductivepillar are disposed on the sensing surface, and the first conductivepillar is arranged in a periphery of the sensing area; a lid coveringthe sensing area; an encapsulant disposed on the redistribution circuitstructure and encapsulating at least part of the image sensing chip andthe lid; and a top tier semiconductor chip disposed above thesemiconductor element and having an active surface, wherein a firstconductor is disposed on the active surface of the top tiersemiconductor chip. The first conductor overlaps the semiconductorelement in a direction perpendicular to the sensing surface, and thefirst conductive pillar and the first conductor are aligned with andbonded to each other to electrically connect the semiconductor elementand the top tier semiconductor chip.

The disclosure provides a manufacturing method of an image sensorpackage, including: disposing an image sensing chip having a sensingsurface on a redistribution circuit structure, wherein a lid and a firstconductive pillar are disposed on the sensing surface of the imagesensing chip, and the first conductive pillar surrounds the lid on thesensing surface; disposing an encapsulant on the redistribution circuitstructure to encapsulate the image sensing chip; performing aplanarization process to expose the first conductive pillar and the lidfrom the encapsulant; and disposing a top tier semiconductor chip on theencapsulant so that a first conductor of the top tier semiconductor chipand the first conductive pillar are bonded to each other. The firstconductor overlaps the image sensing chip in a direction perpendicularto the sensing surface.

Based on the above, the image sensor package of the disclosure hasimproved overall performance.

Several exemplary embodiments accompanied with drawings are described indetail below to further describe the disclosure.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the disclosure, and are incorporated in and constitutea part of this specification. The drawings illustrate exemplaryembodiments of the disclosure and, together with the description, serveto explain the principles of the disclosure.

FIG. 1A to FIG. 1H are schematic cross-sectional views showing processesof manufacturing an image sensor package according to an embodiment ofthe disclosure.

FIG. 2 is a schematic cross-sectional view showing an image sensorpackage according to an embodiment of the disclosure.

FIG. 3 is a schematic cross-sectional view showing an image sensorpackage according to another embodiment of the disclosure.

DETAILED DESCRIPTION OF DISCLOSED EMBODIMENTS

The following describes exemplary embodiments in detail with referenceto the accompanying drawings, but the embodiments provided are notintended to limit the scope of the disclosure. In addition, the drawingsare provided for illustration purposes only and may not be drawn toscale. Different layers or regions may be enlarged or reduced to bedisplayed in a single drawing. Moreover, although terms such as “first”,“second”, and so on are used to describe different elements, regions,and/or components, these elements, regions, and/or components should notbe limited by these terms. These terms are only used to distinguish oneelement, region, or component from another element, region, orcomponent. Thus, a first element, region, or component discussedhereinafter may also be called a second element, region, or componentwithout departing from the teachings of the embodiments. The same orsimilar reference numerals will be used to indicate the same or similarelements, and descriptions thereof will be omitted to avoid repetition.

In this specification, spatially relative terms such as “upper” and“lower” are defined with reference to the drawings. Therefore, it shouldbe understood that the term “upper surface” is used interchangeably withthe term “lower surface”. Further, when an element such as a layer or afilm is described as being disposed on another element, the element maybe directly placed on another element, or there may be an interveningelement between the two elements. However, when an element is describedas being directly disposed on another element, there is no interveningelement between the two elements. Similarly, when an element isdescribed as being connected to another element, the element may bedirectly connected to another element, or there may be an interveningelement between the two elements. However, when an element is describedas being directly connected to another element, there is no interveningelement between the two elements.

FIG. 1A to FIG. 1H are schematic cross-sectional views showing processesof manufacturing an image sensor package according to the firstembodiment of the disclosure. FIG. 2 is a schematic cross-sectional viewshowing the image sensor package according to the first embodiment ofthe disclosure.

Referring to FIG. 1A, a carrier 10 is provided. A release film 20 isformed on the carrier 10. The carrier 10 may be a supporting substrateused in a semiconductor chip packaging process. The material of thecarrier 10 may include glass, ceramic, semiconductor. etc. Although itis shown in the drawings that only an image sensor is packaged on thecarrier 10, the carrier 10 may be a large-sized wafer carrier. In otherwords, a plurality of image sensor packages can be formed on the carrier10 at the same time. The release film 20 may be formed of an adhesive(for example, an ultra-violet (UV) glue, a light-to-heat conversion(LTHC) glue, or other types of adhesives). Take a release film 20 formedof the UV glue as an example, the release film 20 may be irradiated withUV light to eliminate or reduce the viscosity of the release film 20, sothat the carrier 10 and the release film 20 can be separated from thestructure formed in the subsequent processes. Take the LTHC glue as anexample, the release film 20 may be irradiated with light carrying anappropriate amount of energy to be decomposed by the thermal energy ofthe light and to lose or reduce viscosity, so that the carrier 10 andthe release film 20 can be separated from the structure formed in thesubsequent processes.

Referring to FIG. 1B, a redistribution wiring layer 116 and a dielectriclayer 114 are formed on the release film 20 by thin film processes toform a redistribution circuit structure 110.

The redistribution wiring layer 116 may be formed by a build-up process.For example, the processes of forming the redistribution wiring layer116 include the following processes. First, a seed layer is sputtered ordeposited on the release film 20. The material of the seed layer may be,for example, a conductive material such as titanium/copper. Next, apatterned photoresist layer is formed on the seed layer to expose theseed layer. A conductive material is formed on the seed layer exposed bythe patterned photoresist layer by an electroplating process. Theconductive material may include copper (Cu), silver (Ag), palladium(Pd), aluminum (Al), nickel (Ni), titanium (Ti), gold (Au), platinum(Pt), tungsten (W), or an alloy thereof. Next, the photoresist layer andpart of the seed layer not covered by the conductive material areremoved to form the redistribution wiring layer 116.

A method of forming the dielectric layer 114 may include spin coating,chemical vapor deposition (CVD), plasma-enhanced chemical vapordeposition (PECVD), etc. The material of the dielectric layer 114 mayinclude polyimide, epoxy resin, acrylic resin, phenolic resin,bismaleimide-triazine resin (BT resin), or any other suitablepolymer-based dielectric materials and a silicon oxide layer, a siliconnitride layer, a silicon oxynitride layer, or other suitable silicondielectric materials. The dielectric layer 114 may be a photosensitiveinsulating layer including a photosensitive insulating resin.

The redistribution circuit structure 110 may include a plurality of orone single redistribution wiring layer 116. When the redistributioncircuit structure 110 includes a plurality of redistribution wiringlayers 116, the processes of forming the upper redistribution wiringlayer 116 include the following processes. First, an opening is formedin the dielectric layer 114 to expose the redistribution wiring layer116 thereunder. A method of forming the opening in the dielectric layer114 may include different processes depending on the material of thedielectric layer 114. When the dielectric layer 114 is a photosensitiveinsulating layer including a photosensitive insulating resin, thedielectric layer 114 may be patterned by a lithography process to formthe opening. When the dielectric layer 114 is a non-photosensitiveinsulating layer, the dielectric layer 114 may be patterned by alithography/etching process, a laser drilling process, or a mechanicaldrilling process to form the opening. Referring to the enlarged view inFIG. 1B, a top width DT of the opening formed in the dielectric layer114 may be greater than a bottom width DB. That is, an angle α betweenthe tapered sidewalls of the opening and the upper surface of thedielectric layer 114 may be greater than 90°. Then, the upperredistribution wiring layer 116 is formed by a method the same as themethod of forming the redistribution wiring layer 116 described above tobe connected to the redistribution wiring layer 116 exposed through theopening of the dielectric layer 114. Although the drawing illustratesthat the redistribution circuit structure 110 includes three dielectriclayers 114 and three redistribution wiring layers 116, the disclosure isnot limited thereto. The redistribution circuit structure 110 mayinclude more or fewer dielectric layers 114 and redistribution wiringlayers 116.

Referring to FIG. 1C, a second conductive pillar 112 may be formed onthe redistribution circuit structure 110. For example, the processes offorming the second conductive pillar 112 include the followingprocesses. First, an opening is formed in the dielectric layer 114 ofthe redistribution circuit structure 110 to expose the redistributionwiring layer 116. The method of forming the opening in the dielectriclayer 114 may include different processes depending on the material ofthe dielectric layer 114. When the dielectric layer 114 is aphotosensitive insulating layer including a photosensitive insulatingresin, the dielectric layer 114 may be patterned by a lithographyprocess to form the opening. When the dielectric layer 114 is anon-photosensitive insulating layer, the dielectric layer 114 may bepatterned by a lithography/etching process, a laser drilling process, ora mechanical drilling process to form the opening. The top width of theopening may be greater than the bottom width. That is, the angle betweenthe tapered sidewalls of the opening and the upper surface of thedielectric layer 114 may be greater than 90°. Thereafter, a seed layeris formed on the dielectric layer 114. A seed layer is then formed onthe surfaces of the redistribution wiring layer 116 and the dielectriclayer 114. The material of the seed layer may be, for example, aconductive material such as titanium/copper. Next, a patternedphotoresist layer is formed on the seed layer. The patterned photoresistlayer may be formed by a lithography and/or etching process. The openingof the patterned photoresist layer exposes the surface of the seed layeron the redistribution wiring layer 116. Then, a plurality of conductivepillar-shaped structures may be formed in the openings of the patternedphotoresist layer. A method of forming the conductive pillar-shapedstructure may be, for example, printing, electroplating, electrolessplating, or a combination thereof. Thereafter, the patterned photoresistlayer and part of the seed layer are removed to form the secondconductive pillar 112. The material of the second conductive pillar 112may be a metal having excellent electrical characteristics or an alloythereof, such as copper (Cu), silver (Ag), palladium (Pd), aluminum(Al), nickel (Ni), titanium (Ti), gold (Au), platinum (Pt), tungsten(W), or an alloy thereof.

Referring to FIG. 1D, the image sensing chip 120 may be attached to theredistribution circuit structure 110 through an adhesive layer 190 suchas a die attach film (DAF). The image sensing chip 120 may be a CMOSimage sensing chip. However, the disclosure is not intended to limit thetype of the image sensing chip 120, and the image sensing chip 120 maybe other suitable types of image sensing chips. A micro lens 123 may beprovided on a sensing surface 120A of the image sensing chip 120, and asensing area 122 of the image sensing chip 120 is under the micro lens123. The micro lens 123 is covered by a lid 130. The lid 130 may be, forexample, a transparent glass substrate. A sealing structure 125 such asa sealant is formed between the lid 130 and the micro lens 123 toseparate the lid 130 and the micro lens 123 from each other. Inaddition, the sealing structure 125 may define a space between the lid130 and the image sensing chip 120. The image sensing chip 120 has afirst conductive pillar 121, and the first conductive pillar 121 islocated in the periphery of the sensing area 122 on the sensing surface120A. The material of the first conductive pillar 121 may be a metalhaving excellent electrical characteristics or an alloy thereof, such ascopper (Cu), silver (Ag), palladium (Pd), aluminum (Al), nickel (Ni),titanium (Ti), gold (Au), platinum (Pt), tungsten (W), or an alloythereof.

Referring to FIG. 1E and FIG. 1F, an encapsulant 140 is formed, and theencapsulant 140 encapsulates the image sensing chip 120 and the secondconductive pillar 112. The material of the encapsulant 140 may include amolding compound, a molding underfill, a resin, or an epoxy moldingcompound (EMC). If required, the encapsulant 140 may be doped withinorganic fillers. A method of forming the encapsulant 140 includes thefollowing processes. An encapsulating material layer covering theredistribution circuit structure 110, the image sensing chip 120, andthe second conductive pillar 112 is formed on the carrier 10 by asuitable process (for example, a molding process or a depositionprocess), and at the same time, the sealing structure 125 may block theencapsulant 140 from entering the space between the lid 130 and theimage sensing chip 120. Thereafter, a planarization process (forexample, chemical mechanical polishing (CMP)) is performed to partiallyremove the encapsulating material layer and/or part of the firstconductive pillar 121, the second conductive pillar 112, and the lid 130until the surfaces of the first conductive pillar 121, the secondconductive pillar 112, and the lid 130 are exposed. That is, the uppersurfaces of the first conductive pillar 121, the second conductivepillar 112, the lid 130, and the encapsulant 140 are positioned at thesame level by the planarization process. In other words, the uppersurfaces of the first conductive pillar 121, the second conductivepillar 112, the lid 130, and the encapsulant 140 are coplanar. The firstconductive pillar 121 and the second conductive pillar 112 may alsoslightly protrude from the upper surface of the encapsulant 140. Thefirst conductive pillar 121 and the second conductive pillar 112 mayalso be slightly recessed from the upper surface of the encapsulant 140.In a case where the upper surfaces of the first conductive pillar 121and the second conductive pillar 112 are slightly recessed from theupper surface of the encapsulant 140, it is easy for the firstconductive pillar 121 and the second conductive pillar 112 to be alignedwith and bonded to a top tier semiconductor chip 150 in the subsequentprocesses.

In this specification, a height of the first conductive pillar 121refers to a vertical distance from the sensing surface 120A of the imagesensing chip 120 to the upper surface of the first conductive pillar121, and a height of the second conductive pillar 112 refers to avertical distance from a surface of the redistribution circuit structure110 that is adjacent to the image sensing chip 120 to the upper surfaceof the second conductive pillar 112. The height of the second conductivepillar 112 may be greater than the height of the first conductive pillar121. A width of the first conductive pillar 121 and a width of thesecond conductive pillar 112 may be the same as each other.Alternatively, the width of the first conductive pillar 121 and thewidth of the second conductive pillar 112 may be different from eachother. For example, the height of the first conductive pillar 121 may be50 μm to 250 μm, and an aspect ratio of the first conductive pillar 121may be 0.5 to 5, for example. The height of the second conductive pillar112 may be 75 μm to 300 μm, and an aspect ratio of the second conductivepillar 112 may be 0.5 to 5, for example.

Referring to FIG. 1G, the top tier semiconductor chip 150 is provided onthe encapsulant 140 so that a first conductor 151 of the top tiersemiconductor chip 150 and the first conductive pillar 121 are alignedwith and bonded to each other, and a second conductor 152 of the toptier semiconductor chip 150 and the second conductive pillar 112 arealigned with and bonded to each other, thereby electrically connectingthe top tier semiconductor chip 150, the image sensing chip 120, and theredistribution circuit structure 110 to one another. In other words, theelectrical connection between the first conductor 151 of the top tiersemiconductor chip 150 and the first conductive pillar 121 and theelectrical connection between the second conductor 152 of the top tiersemiconductor chip 150 and the second conductive pillar 112 are realizednot through the redistribution circuit structure. In such a case, thepackaging process is simplified, and the electrical connection pathsbetween the top tier semiconductor chip 150 and the first conductivepillar 121 and the second conductive pillar 112 are effectivelyshortened. As a result, the communication efficiency between the toptier semiconductor chip 150 and the image sensing chip 120 is furtherimproved.

The first conductor 151 of the top tier semiconductor chip 150 overlapsthe image sensing chip 120 in a direction perpendicular to the sensingsurface 120A of the image sensing chip 120 while the second conductor152 of the top tier semiconductor chip 150 does not overlap the imagesensing chip 120 in the direction perpendicular to the sensing surface120A of the image sensing chip 120. The materials of the first conductor151 and the second conductor 152 may include a conductive material suchas copper (Cu), silver (Ag), palladium (Pd), aluminum (Al), nickel (Ni),titanium (Ti), gold (Au), platinum (Pt), tungsten (W), or alloysthereof. Regarding the shape, the first conductor 151 and the secondconductor 152 may each be a pillar or a stud bump. A method of bondingthe first conductor 151 to the first conductive pillar 121 and bondingthe second conductor 152 to the second conductive pillar 112 mayinclude, for example, direct bonding using heat or bonding using abonding metal. For example, a bonding metal such as a solder alloy,copper, gold, silver, indium, palladium, titanium, manganese, cobalt, oran alloy thereof may be disposed respectively between the firstconductor 151 and the first conductive pillar 121 and between the secondconductor 152 and the second conductive pillar 112 and heated to bondthe first conductor 151 to the first conductive pillar 121 and bond thesecond conductor 152 to the second conductive pillar 112. The bonding ofthe first conductor 151 and the first conductive pillar 121 and thebonding of the second conductor 152 and the second conductive pillar 112may also be realized without using solder. That is, the bonding of thefirst conductor 151 and the first conductive pillar 121 and the bondingof the second conductor 152 and the second conductive pillar 112 may berealized without using a solder alloy. In other words, the bondingsurface between the first conductor 151 and the first conductive pillar121 may be a solderless bonding surface, and the bonding surface betweenthe second conductor 152 and the second conductive pillar 112 may alsobe a solderless bonding surface. The bonding metal may be alow-temperature bonding metal having a melting point of less than 200°C. For example, the low-temperature bonding metal may include twincrystal copper, twin crystal silver or other nano twin crystalmaterials, an indium tin alloy, a tin bismuth alloy, porous gold, or acombination thereof. Compared with the conventional solder balls orsolder that requires a reflow temperature higher than or equal to 250°C., the use of a low-temperature bonding metal allows the connectedstructures to be stably bonded at a relatively low heating temperature(for example, at a temperature less than 200° C. or less than 150° C.),and meets the reliability requirement of electrical connection.

FIG. 1G illustrates that the image sensor package includes two top tiersemiconductor chips 150, but the disclosure is not limited thereto. Theimage sensor package may include one single top tier semiconductor chip150 or a plurality of top tier semiconductor chips 150 arranged side byside on the encapsulant 140. The plurality of top tier semiconductorchips 150 may be the same as one another. Alternatively, the pluralityof top tier semiconductor chips 150 may be different from one another.The top tier semiconductor chip 150 may include a memory chip, anapplication processor chip, a logic chip, or an artificial intelligence(AI) chip.

Referring to FIG. 1G again, a primer 160 may be applied on theencapsulant 140 to encapsulate the first conductor 151 and the secondconductor 152. The primer 160 may fill the space between the top tiersemiconductor chip 150 and the encapsulant 140 and encapsulate the firstconductor 151 and the second conductor 152. As shown in FIG. 1G, theprimer 160 has tapered sidewalls, and a top width of the primer 160 is,for example, smaller than a bottom width of the primer 160. In someembodiments, the width of the primer 160 changes gradually, and thewidth of the primer 160 gradually decreases from one end closer to theencapsulant 140 toward the other end closer to the top tiersemiconductor chip 150.

Referring to FIG. 1G and FIG. 1H, a release process is performed toseparate the structure shown in FIG. 1H from the carrier 10 and therelease film 20. When the release film is formed of the UV glue, therelease film 20 may be irradiated with UV light in the release processto eliminate or reduce the viscosity of the release film 20, so that thecarrier 10 and the release film 20 can be separated from the structureshown in FIG. 11H. When the release film is formed of the LTHC glue, therelease film 20 may be irradiated with light carrying an appropriateamount of energy in the release process to be decomposed by the thermalenergy of the light and to lose or reduce viscosity, so that the carrier10 and the release film 20 can be separated from the structure shown inFIG. 1H.

Next, a plurality of conductive terminals 170 may be formed on thesurface of the redistribution circuit structure 110, which is separatedfrom the carrier 10 and the release film 20, to complete the imagesensor package 100 of the disclosure as shown in FIG. 2. The conductiveterminals 170 are, for example, solder balls, but the disclosure is notlimited thereto. A plurality of image sensor packages 100 of thedisclosure may be formed on a large-sized wafer at the same time, andthen the image sensor packages 100 are separated from one another by acutting process, for example. Therefore, the sidewall of the encapsulant140 in the image sensor package 100 of the disclosure may be alignedwith the sidewall of the redistribution circuit structure 110.

Referring to FIG. 2, in the image sensor package 100 of the disclosure,the image sensing chip 120 and the top tier semiconductor chip 150 areconnected to each other through the first conductive pillar 121 of theimage sensing chip 120 and the first conductor 151 of the top tiersemiconductor chip 150. In other words, no circuit layer is disposedbetween the image sensing chip 120 and the top tier semiconductor chip.Since the image sensing chip 120 and the top tier semiconductor chip 150are connected through the first conductive pillar 121 of the imagesensing chip 120 and the first conductor 151 of the top tiersemiconductor chip 150 instead of a circuit layer, the power and/orsignal transmission path between the image sensing chip 120 and the toptier semiconductor chip 150 is shortened, and consequently the speed andquality of power and/or signal transmission are improved.

In the present embodiment, a plurality of top tier semiconductor chips150 arranged side by side may be connected to one another through awiring structure inside the image sensing chip 120. Generally speaking,a plurality of semiconductor chips arranged side by side are connectedto one another using a circuit layer or solder wires. In a generalcircuit layer, the line width and the line pitch are both about 2 μm,the width of a via is about 5 μm, the width of a connection pad is about7 μm, and the number of layers is generally three. In the wiringstructure inside the image sensing chip, the line width and the linepitch are both about 0.4 μm, the width of a via is about 0.4 μm, thewidth of a connection pad is about 0.7 μm, and the number of layers isgenerally four. In other words, the wiring structure in the imagesensing chip has a higher line density and a larger number of layers. Inthe present embodiment, the image sensing chip 120 that has a higherdensity and multi-layer connection capability is used for connection.Therefore, compared with using a general circuit layer for connection,the image sensor package 100 of the present embodiment achieveshigh-frequency signal connection.

In the present embodiment, the redistribution circuit structure 110 andthe top tier semiconductor chip 150 may be connected to each otherthrough the second conductive pillar 112 and the second conductor 152 ofthe top tier semiconductor chip 150. Therefore, the aspect ratio of thesecond conductive pillar 112 may be adjusted to provide a transmissionpath for other signals and a large current (for example, ground) betweenthe redistribution circuit structure 110 and the top tier semiconductorchip 150.

In the present embodiment, the signal transmission path of the imagesensing chip 120 may be connected to an external signal through thefirst conductive pillar 121, the top tier semiconductor chip 150, thesecond conductive pillar 112, the redistribution circuit structure 110,and then the conductive terminal 170. Therefore, TSV may be omitted toreduce the production cost of the image sensor package 100.

FIG. 3 is a schematic cross-sectional view showing an image sensorpackage according to another embodiment of the disclosure.

Referring to FIG. 3, the image sensor package 200 according to anotherembodiment of the disclosure includes a semiconductor element 220. Thesemiconductor element 220 may include a plurality of chips havingdifferent functions. For example, the semiconductor element 220 mayinclude an image sensing chip 230 and a bottom tier semiconductor chip240 stacked on top of each other. The bottom tier semiconductor chip 240may be a memory chip, a processor chip, and/or a logic chip depending onthe function of the image sensor package 200. The image sensing chip 230and the bottom tier semiconductor chip 240 may be connected to eachother through a first connection conductor 230P of the image sensingchip 230 and a second connection conductor 240P of the bottom tiersemiconductor chip 240. Since the electrical path between the imagesensing chip 230 and the bottom tier semiconductor chip 240 is short,fast signal transmission is achieved.

Configurations besides the above configuration have been specified inthe description of the image sensor package 100 above, and thereforewill not be repeated hereinafter.

In conclusion, the image sensor package of the disclosure shortens thepower and/or signal transmission path in the image sensor package andimproves the overall performance of the image sensor package.

Although the disclosure has been described with reference to the aboveembodiments, the embodiments are not intended to limit the disclosure. Aperson of ordinary skill in the art may make variations andmodifications without departing from the spirit and scope of thedisclosure. Therefore, the protection scope of the disclosure should besubject to the appended claims.

What is claimed is:
 1. A manufacturing method of an image sensorpackage, comprising: disposing an image sensing chip having a sensingsurface on a redistribution circuit structure, wherein a lid and a firstconductive pillar are disposed on the sensing surface of the imagesensing chip, and the first conductive pillar surrounds the lid on thesensing surface; disposing an encapsulant on the redistribution circuitstructure to encapsulate the image sensing chip; performing aplanarization process to expose the first conductive pillar and the lidfrom the encapsulant; and disposing a top tier semiconductor chip on theencapsulant so that a first conductor of the top tier semiconductor chipand the first conductive pillar are bonded to each other, wherein thefirst conductor overlaps the image sensing chip in a directionperpendicular to the sensing surface.
 2. The manufacturing method of theimage sensor package according to claim 1, further comprising: disposinga second conductive pillar in a periphery of the redistribution circuitstructure; and bonding the second conductive pillar and a secondconductor of the top tier semiconductor chip to electrically connect thetop tier semiconductor chip and the redistribution circuit structure,wherein the second conductor does not overlap the image sensing chip inthe direction perpendicular to the sensing surface.
 3. The manufacturingmethod of the image sensor package according to claim 1, wherein thefirst conductor and the first conductive pillar are bonded at atemperature of 200° C. or less.